unisonic technologies co., ltd 6n70z preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2013 unisonic technologies co., ltd qw-r502-a02. a. 6.0a, 700v n-channel power mosfet ? description the utc 6n70z is an n-channel mode power mosfet using utc?s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate charge and low input capacitance. the utc 6n70z is universally applied in high efficiency switch mode power supply. ? features * r ds(on) =1.9 ? @ v gs =10v, i d =3a * high switching speed ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 6N70ZL-T82-T 6n70zg-t82-t sot-82 g d s tube 6n70zl-tm3-t 6n70zg-tm3-t to-251 g d s tube note: pin assignment: g: gate d: drain s: source
6n70z preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw ver. a ? absolute maximum ratings (unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage (note 2) v gss 20 v drain current continuous t c =25c i d 6 a t c =100c 3.8 a pulsed i dm 24 a avalanche current (note 2) i ar 6 a avalanche energy single pulsed (note 3) e as 300 mj repetitive (note 2) e ar 13 mj peak diode recovery dv/dt (note 4) dv/dt 2.5 v/ns power dissipation sot-82 p d 75 w to-251 55 w linear derarting factor sot-82 0.60 w/c to-251 0.44 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. l = 30mh, i as = 6a, v dd = 50v, r g = 27 ? , starting t j = 25c 4. i sd 6a, di/dt 140a/s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient sot-82 ja 62.5 /w to-251 110 /w junction to case sot-82 jc 1.67 /w to-251 2.27 /w
6n70z preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-a02. a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 700 v breakdown voltage temperature coefficient ? bv dss / ? t j i d =250a 0.79 v/c drain-source leakage current i dss v ds =700v 25 a v ds =560v, t c =125c 250 a gate-source leakage current forward i gss v gs =+20v, v ds =0v 5 a reverse v gs =-20v, v ds =0v -5 a on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a, v ds =5v 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =3a (note 1) 1.65 1.9 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz (note 1, 2) 900 1200 pf output capacitance c oss 90 115 pf reverse transfer capacitance c rss 18 55 pf switching parameters turn-on delay time t d ( on ) v dd =30v, i d =0.5a, r g =25 ? v gs =0~10v 40 70 ns rise time t r 65 90 ns turn-off delay time t d ( off ) 140 165 ns fall-time t f 60 85 ns total gate charge q g v dd =50v, i g =100 a, i d =1.3a (note 1, 2) 26 30 nc gate to source charge q gs 6.9 nc gate to drain charge q gd 6.4 nc source- drain diode ratings and characteristics maximum body-diode continuous current i s integral reverse pn-diode in the mosfet 6 a maximum body-diode pulsed current (note 3) i sm 24 a drain-source diode forward voltage (note 2) v sd i s =6a, v gs =0v, t j = 25c 1.4 v body diode reverse recovery time t r r i f =6a, di f /dt=100a/s, t j = 25c 440 ns body diode reverse recovery charge q rr 4.05 c notes: 1. pulse test: pulse width 250s, duty cycle 2% 2. essentially independent of operating temperature 3. repetitive rating: pulse width limit ed by maximum junction temperature
6n70z preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-a02. a ? test circuits and waveforms 50k ? 300nf dut v ds 12v v gs 200nf same type as dut 3ma gate charge test circuit gate charge waveforms v gs dut r g v ds r d 10v v ds v gs 90% 10% t d(on) t r t f t d(off) t on t off resistive switching test circuit resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms
6n70z preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-a02. a ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
6n70z preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-a02. a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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